Stress distribution

The detection of crystalline distorion, such as in silicon, is possible using Raman imaging. Looking at the Raman peak of silicon appearing at 520cm^-1, its peak postion shifts in response to the distortion of the silicon crystal lattice casued by stress. The figure shows the stress distribution of the silicon crystal obtained by imaging the shift of the peak position. RAMAN-11 enables us the achieve the imaging by detecting just 0.1cm^-1 of the peak shift.